BD139
₹8.00
46 in stock
- Plastic casing NPN Transistor
- Continuous Collector current (IC) is 1.5A
- Collector-Emitter voltage (VCE) is 80 V
- Collector-Base voltage (VCB) is 80V
- Base Current (Ib) is 0.5A
- Emitter Base Breakdown Voltage (VBE) is 5V
- DC current gain (hfe) is 40 to 160
- Available in To-225 package
| Weight | 0.005 kg |
|---|---|
| Dimensions | 1 × 1 × 1 cm |
Related products
-
2SA1941
₹60.00Add to basketMaterial of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 100 W Maximum Collector-Base Voltage |Vcb|: 140 V Maximum Collector-Emitter Voltage |Vce|: 140 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 10 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 30 MHz Collector Capacitance (Cc): 320 pF …
-
2SA940
₹14.00Read moreType – PNP Collector-Emitter Voltage: -150 V Collector-Base Voltage: -150 V Emitter-Base Voltage: -5 V Collector Current: -1.5 A Collector Dissipation – 25 W DC Current Gain (hfe) – 40 to 140 Transition Frequency – 4 MHz Operating and Storage Junction Temperature Range -55 to +150 °C Package – TO-220
-
2SA1015
₹4.00Add to basketMaterial of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.4 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 50 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.15 A Max. Operating Junction Temperature (Tj): 125 °C Transition Frequency (ft): 80 MHz Collector Capacitance (Cc): 4 pF …
Reviews
There are no reviews yet.