IRF3205
₹30.00
20 in stock
- N-Channel Power MOSFET
- Continuous Drain Current (ID) is 110A when VGS is 10V
- Minimum Gate threshold voltage 2V
- Drain to Source Breakdown Voltage: 55V
- Low On-Resistance of 8.0mΩ
- Gate-Source Voltage is (VGS) is ±20V
- Rise time is 101ns
- It is commonly used with Power Switching circuits
- Available in To-220 package
| Weight | 0.01 kg |
|---|---|
| Dimensions | 1 × 1 × 1 cm |
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₹20.00Read moreSmall signal N-Channel MOSFET Continuous Drain Current (ID) is 49A at 25°C Pulsed Drain Current (ID-peak) is 160A Minimum Gate threshold voltage (VGS-th) is 2V Maximum Gate threshold voltage (VGS-th) is 4V Gate-Source Voltage is (VGS) is ±20V (max) Maximum Drain-Source Voltage (VDS) is 55V Rise time and fall time is about 60ns and 45ns …
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