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Category: Bipolar Junction Transistor

Showing 1–20 of 24 results

  • 2N2222 Amplifier NPN Transistor

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  • 2N5401 is PNP transistor that designed specifically for high voltage – low power switching applications and amplifications.

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  • Features: Amplifier NPN Transistor High DC Current Gain (hFE), typically 80 when IC=10mA Continuous Collector current (IC) is 600mA Collector-Emitter voltage (VCE) is 160 V Collector-Base voltage (VCB) is 180V Emitter Base Voltage (VBE) is 6V Transition Frequency is 100MHz Available in To-92 Package

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  • Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.4 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 50 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.15 A Max. Operating Junction Temperature (Tj): 125 °C Transition Frequency (ft): 80 MHz Collector Capacitance (Cc): 4 pF …

    2SA1015Read More

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  • Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 100 W Maximum Collector-Base Voltage |Vcb|: 140 V Maximum Collector-Emitter Voltage |Vce|: 140 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 10 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 30 MHz Collector Capacitance (Cc): 320 pF …

    2SA1941Read More

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  • Features High Power PNP Transistor DC Current Gain (hFE) 55 to 160 Continuous Collector current (IC) is 15A Collector-Emitter voltage (VCE) is 230 V Collector-Base voltage (VCB) is 230V Emitter Base Voltage (VBE) is 5V Available in To-264 Package

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  • Type – PNP Collector-Emitter Voltage: -150 V Collector-Base Voltage: -150 V Emitter-Base Voltage: -5 V Collector Current: -1.5 A Collector Dissipation – 25 W DC Current Gain (hfe) – 40 to 140 Transition Frequency – 4 MHz Operating and Storage Junction Temperature Range -55 to +150 °C Package – TO-220

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  • Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 80 W Maximum Collector-Base Voltage |Vcb|: 120 V Maximum Collector-Emitter Voltage |Vce|: 120 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 8 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 5 MHz Collector Capacitance (Cc): 280 pF …

    2SB688Read More

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  • Features General Purpose NPN Transistor DC Current Gain (hFE) 70 to 700 Continuous Collector current (IC) is 0.15A Collector-Emitter voltage (VCE) is 50V Collector-Base voltage (VCB) is 60V Transition Frequency: 80MHz Available in To-92 Package

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  • Type – NPN Collector-Emitter Voltage: 150 V Collector-Base Voltage: 150 V Emitter-Base Voltage: 5 V Collector Current: 1.5 A Collector Dissipation – 25 W DC Current Gain (hfe) – 40 to 140 Transition Frequency – 4 MHz Operating and Storage Junction Temperature Range -55 to +150 °C Package – TO-220

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  • Type – NPN Collector-Emitter Voltage: 150 V Collector-Base Voltage: 200 V Emitter-Base Voltage: 5 V Collector Current: 0.05 A Collector Dissipation – 0.8 W DC Current Gain (hfe) – 70 to 240 Transition Frequency – 120 MHz Operating and Storage Junction Temperature Range -55 to +150 °C Package – TO-92MOD

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  • Type – NPN Collector-Emitter Voltage: 140 V Collector-Base Voltage: 140 V Emitter-Base Voltage: 5 V Collector Current: 10 A Collector Dissipation – 100 W DC Current Gain (hfe) – 55 to 160 Transition Frequency – 30 MHz Operating and Storage Junction Temperature Range -55 to +150 °C Package – TO-3P

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  • High-power NPN Transistor DC Current Gain (hFE) 55 to 160 Continuous Collector current (IC) is 15A Collector-Emitter voltage (VCE) is 230 V Collector-Base voltage (VCB) is 230V Emitter Base Voltage (VBE) is 5V Transition Frequency is 30MHz Available in To-264 Package

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  • Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 80 W Maximum Collector-Base Voltage |Vcb|: 120 V Maximum Collector-Emitter Voltage |Vce|: 120 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 8 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 5 MHz Collector Capacitance (Cc): 280 pF …

    2SD718Read More

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  • Bi-Polar NPN Transistor DC Current Gain (hFE) is 800 maximum Continuous Collector current (IC) is 100mA Emitter Base Voltage (VBE) is 6V Base Current(IB) is 5mA maximum Available in To-92 Package

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  • Plastic casing NPN Transistor Continuous Collector current (IC) is 1.5A Collector-Emitter voltage (VCE) is 80 V Collector-Base voltage (VCB) is 80V Base Current (Ib) is 0.5A Emitter Base Breakdown Voltage (VBE) is 5V DC current gain (hfe) is 40 to 160 Available in To-225 package

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  • Plastic casing PNP Transistor Continuous Collector current (IC) is 1.5A Collector-Emitter voltage (VCE) is 80 V Collector-Base voltage (VCB) is 80V Base Current (Ib) is 0.5A Emitter Base Breakdown Voltage (VBE) is 5V DC current gain (hfe) is 40 to 160 Available in To-225 package

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  • Type – NPN Collector-Emitter Voltage: 300 V Collector-Base Voltage: 300 V Emitter-Base Voltage: 5 V Collector Current: 0.5 A Collector Dissipation – 20 W DC Current Gain (hfe) – 30 to 240 Operating and Storage Junction Temperature Range -65 to +150 °C Package – TO-126

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  • Type – PNP Collector-Emitter Voltage: 300 V Collector-Base Voltage: 300 V Emitter-Base Voltage: 5 V Collector Current: 0.5 A Collector Dissipation – 20 W DC Current Gain (hfe) – 30 to 240 Operating and Storage Junction Temperature Range -65 to +150 °C Package – TO-126

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  • Low Voltage, High Current NPN Transistor Small Signal Transistor Maximum Power: 2 Watts Maximum DC Current Gain (hFE) is 400 Continuous Collector current (IC) is 700mA Base- Emitter Voltage (VBE) is 5V Collector-Emitter Voltage (VCE) is 20V Collector-Base Voltage (VCB) is 30V High Used in push-pull configuration doe Class B amplifiers Available in To-92 Package

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