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Category: Bipolar Junction Transistor

Showing 21–24 of 24 results

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    TIP142

    ₹90.00

    Type – NPN Collector-Emitter Voltage: 100 V Collector-Base Voltage: 100 V Emitter-Base Voltage: 5 V Collector Current: 10 A Collector Dissipation – 125 W DC Current Gain (hfe) – 1000 Operating and Storage Junction Temperature Range -65 to +150 °C Package – TO-247

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    TIP147

    ₹90.00

    Type – PNP Collector-Emitter Voltage: 100 V Collector-Base Voltage: 100 V Emitter-Base Voltage: 5 V Collector Current: 10 A Collector Dissipation – 125 W DC Current Gain (hfe) – 1000 Operating and Storage Junction Temperature Range -65 to +150 °C Package – TO-247

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    TIP41C

    ₹20.00

    Package Type: TO-220 Transistor Type: NPN Max Collector Current(IC): 6A or 6000mA Max Collector-Emitter Voltage (VCE): 100V Max Collector-Base Voltage (VCB): 100V Max Emitter-Base Voltage (VEBO): 5V Max Collector Dissipation (Pc): 65W Max Transition Frequency (fT): 3 MHz Minimum & Maximum DC Current Gain (hFE): 15 – 75 Max Storage & Operating temperature Should Be: -65 to +150 Centigrade

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    TIP42C

    ₹20.00

    Package Type: TO-220 Transistor Type: PNP Max Collector Current(IC): 6A or 6000mA Max Collector-Emitter Voltage (VCE): 100V Max Collector-Base Voltage (VCB): 100V Max Emitter-Base Voltage (VEBO): 5V Max Collector Dissipation (Pc): 65W Max Transition Frequency (fT): 3 MHz Minimum & Maximum DC Current Gain (hFE): 15 – 75 Max Storage & Operating temperature Should Be: -65 to +150 Centigrade

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