Category: Metal Oxide Semiconductor Field Effect Transistor

Showing all 2 results

• 

  Quick View

  IRF3205

  ₹30.00

  N-Channel Power MOSFET Continuous Drain Current (ID) is 110A when VGS is 10V Minimum Gate threshold voltage 2V Drain to Source Breakdown Voltage: 55V Low On-Resistance of 8.0mΩ Gate-Source Voltage is (VGS) is ±20V Rise time is 101ns It is commonly used with Power Switching circuits Available in To-220 package

  Add to basket
• 

  Quick View

  IRFZ44N

  ₹20.00

  Small signal N-Channel MOSFET Continuous Drain Current (ID) is 49A at 25°C Pulsed Drain Current (ID-peak) is 160A Minimum Gate threshold voltage (VGS-th) is 2V Maximum Gate threshold voltage (VGS-th) is 4V Gate-Source Voltage is (VGS) is ±20V (max) Maximum Drain-Source Voltage (VDS) is 55V Rise time and fall time is about 60ns and 45ns …

  IRFZ44NRead More

  Read more