Store
Showing 61–80 of 198 results
-
2N5551
₹3.50Add to basketFeatures: Amplifier NPN Transistor High DC Current Gain (hFE), typically 80 when IC=10mA Continuous Collector current (IC) is 600mA Collector-Emitter voltage (VCE) is 160 V Collector-Base voltage (VCB) is 180V Emitter Base Voltage (VBE) is 6V Transition Frequency is 100MHz Available in To-92 Package
-
2SA1015
₹4.00Add to basketMaterial of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.4 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 50 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.15 A Max. Operating Junction Temperature (Tj): 125 °C Transition Frequency (ft): 80 MHz Collector Capacitance (Cc): 4 pF …
-
2SA1941
₹60.00Add to basketMaterial of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 100 W Maximum Collector-Base Voltage |Vcb|: 140 V Maximum Collector-Emitter Voltage |Vce|: 140 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 10 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 30 MHz Collector Capacitance (Cc): 320 pF …
-
2SA940
₹14.00Read moreType – PNP Collector-Emitter Voltage: -150 V Collector-Base Voltage: -150 V Emitter-Base Voltage: -5 V Collector Current: -1.5 A Collector Dissipation – 25 W DC Current Gain (hfe) – 40 to 140 Transition Frequency – 4 MHz Operating and Storage Junction Temperature Range -55 to +150 °C Package – TO-220
-
2SB688
₹50.00Add to basketMaterial of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 80 W Maximum Collector-Base Voltage |Vcb|: 120 V Maximum Collector-Emitter Voltage |Vce|: 120 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 8 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 5 MHz Collector Capacitance (Cc): 280 pF …